Renesas 2SK3069 User Manual

Rev.11.00 Sep 07, 2005 page 1 of 7 2SK3069 Silicon N Channel MOS FET High Speed Power Switching REJ03G1062-1100 (Previous: ADE-208-694I) Rev.11.00

2SK3069 Rev.11.00 Sep 07, 2005 page 2 of 7 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to

2SK3069 Rev.11.00 Sep 07, 2005 page 3 of 7 Main Characteristics Power vs. Temperature DeratingChannel Dissipation Pch (W)Case Temperature TC (°

2SK3069 Rev.11.00 Sep 07, 2005 page 4 of 7 Case Temperature TC (°C)Static Drain to Source on StateResistance vs. TemperatureStatic Drain to Sourc

2SK3069 Rev.11.00 Sep 07, 2005 page 5 of 7 Pulse Width PW (S)Normalized Transient Thermal Impedance γs (t)Normalized Transient Thermal Impe

2SK3069 Rev.11.00 Sep 07, 2005 page 6 of 7 Vin MonitorD.U.T.Vin10 VRLVDD = 30 Vtrtd(on)Vin90%90%10%10%Vouttd(off)VoutMonitor50 Ω90%10%tfSwitching T

2SK3069 Rev.11.00 Sep 07, 2005 page 7 of 7 Package Dimensions 0.5 ± 0.12.54 ± 0.50.76 ± 0.114.0 ± 0.5 15.0 ± 0.32.79 ± 0.218.5 ± 0.57.8 ± 0.510.16

Keep safety first in your circuit designs!1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more relia