Rev.4.00 Jun 21, 2006 page 1 of 12 HSG2005 SiGe HBT High Frequency Medium Power Amplifier REJ03G0485-0400 Rev.4.00 Jun 21, 2006 Features • High T
HSG2005 Rev.4.00 Jun 21, 2006 page 10 of 12 S parameter (VCE = 3.3 V, IC = 100 mA, Zo = 50 Ω) S11 S21 S12 S22 f (MHz) MAG ANG (deg.) MAG ANG (deg.)
HSG2005 Rev.4.00 Jun 21, 2006 page 11 of 12 S parameter (VCE = 3.6 V, IC = 100 mA, Zo = 50 Ω) S11 S21 S12 S22 f (MHz) MAG ANG (deg.) MAG ANG (deg.)
HSG2005 Rev.4.00 Jun 21, 2006 page 12 of 12 Package Dimensions 1.9651.96502.002.000.30.650.350.3500.2252.0752.0750.800.050.100.080.10ReferenceSymbo
Keep safety first in your circuit designs!1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more relia
HSG2005 Rev.4.00 Jun 21, 2006 page 2 of 12 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions DC current transfer
HSG2005 Rev.4.00 Jun 21, 2006 page 3 of 12 VCE = 3 V MAG MSG0510152025Collector Current IC (mA)Maximum Stable Gain MSG (dB)Maxi
HSG2005 Rev.4.00 Jun 21, 2006 page 4 of 12 2.4 GHz Characteristics Input Power Pin (dBm)10-10-10152053010 2000Pin - Pout CharacteristicsIop (mA)Ev
HSG2005 Rev.4.00 Jun 21, 2006 page 5 of 12 5.8 GHz Characteristics Input Power Pin (dBm)1005152052515 2010Pin - Pout CharacteristicsIop (mA)OUTIN0.
HSG2005 Rev.4.00 Jun 21, 2006 page 6 of 12 Condition: VCE = 3 V, IC = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step)
HSG2005 Rev.4.00 Jun 21, 2006 page 7 of 12 Condition: VCE = 3.3 V, IC = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step)
HSG2005 Rev.4.00 Jun 21, 2006 page 8 of 12 Condition: VCE = 3.6 V, IC = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step)
HSG2005 Rev.4.00 Jun 21, 2006 page 9 of 12 S parameter (VCE = 3 V, IC = 100 mA, Zo = 50 Ω) S11 S21 S12 S22 f (MHz) MAG ANG (deg.) MAG ANG (deg.) MA
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