Renesas HSG2005 User Manual

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Rev.4.00 Jun 21, 2006 page 1 of 12
HSG2005
SiGe HBT
High Frequency Medium Power Amplifier
REJ03G0485-0400
Rev.4.00
Jun 21, 2006
Features
High Transition Frequency
f
T
= 28.5 GHz typ.
Low Distortion and Excellent Linearity
P1dB at output = +21 dBm typ. f = 5.8 GHz
High Collector to Emitter Voltage
V
CEO
= 5 V
Ideal for 2 GHz, 5 GHz Band applications. e.g. WLAN, Digital cordless phone.
Outline
Renesas Package code: PWQN0008ZA-A
(Package name: HWQFN-8 <TNP-8TV>)
1. Collecto
r
2. Collecto
r
3. Collecto
r
4. Emitter
5. Emitter
6. Base
7. Emitter
8. Emitter
9. Emitter
1
3
7
6
5
2
4
8
9
1
3
7
6
5
2
4
8
9
2005
Note: Marking is “2005”.
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
12 V
Collector to emitter voltage V
CEO
5 V
Emitter to base voltage V
EBO
1.2 V
Collector current I
C
400 mA
Collector power dissipation Pc 1.2
Note
W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: Value on PCB (40 x 40 x 1.0 mm)
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Summary of Contents

Page 1 - HSG2005

Rev.4.00 Jun 21, 2006 page 1 of 12 HSG2005 SiGe HBT High Frequency Medium Power Amplifier REJ03G0485-0400 Rev.4.00 Jun 21, 2006 Features • High T

Page 2 - Main Characteristics

HSG2005 Rev.4.00 Jun 21, 2006 page 10 of 12 S parameter (VCE = 3.3 V, IC = 100 mA, Zo = 50 Ω) S11 S21 S12 S22 f (MHz) MAG ANG (deg.) MAG ANG (deg.)

Page 3

HSG2005 Rev.4.00 Jun 21, 2006 page 11 of 12 S parameter (VCE = 3.6 V, IC = 100 mA, Zo = 50 Ω) S11 S21 S12 S22 f (MHz) MAG ANG (deg.) MAG ANG (deg.)

Page 4 - 2.4 GHz Characteristics

HSG2005 Rev.4.00 Jun 21, 2006 page 12 of 12 Package Dimensions 1.9651.96502.002.000.30.650.350.3500.2252.0752.0750.800.050.100.080.10ReferenceSymbo

Page 5 - 5.8 GHz Characteristics

Keep safety first in your circuit designs!1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more relia

Page 6

HSG2005 Rev.4.00 Jun 21, 2006 page 2 of 12 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions DC current transfer

Page 7

HSG2005 Rev.4.00 Jun 21, 2006 page 3 of 12 VCE = 3 V MAG MSG0510152025Collector Current IC (mA)Maximum Stable Gain MSG (dB)Maxi

Page 8

HSG2005 Rev.4.00 Jun 21, 2006 page 4 of 12 2.4 GHz Characteristics Input Power Pin (dBm)10-10-10152053010 2000Pin - Pout CharacteristicsIop (mA)Ev

Page 9

HSG2005 Rev.4.00 Jun 21, 2006 page 5 of 12 5.8 GHz Characteristics Input Power Pin (dBm)1005152052515 2010Pin - Pout CharacteristicsIop (mA)OUTIN0.

Page 10 - S parameter

HSG2005 Rev.4.00 Jun 21, 2006 page 6 of 12 Condition: VCE = 3 V, IC = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step)

Page 11

HSG2005 Rev.4.00 Jun 21, 2006 page 7 of 12 Condition: VCE = 3.3 V, IC = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step)

Page 12 - Ordering Information

HSG2005 Rev.4.00 Jun 21, 2006 page 8 of 12 Condition: VCE = 3.6 V, IC = 100 mA, Zo = 50 Ω 100 to 3000 MHz (100 MHz Step)

Page 13 - Colophon .6.0

HSG2005 Rev.4.00 Jun 21, 2006 page 9 of 12 S parameter (VCE = 3 V, IC = 100 mA, Zo = 50 Ω) S11 S21 S12 S22 f (MHz) MAG ANG (deg.) MAG ANG (deg.) MA

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